Open AccessPerformance optimization of p-i-n type microcrystalline silicon thin films solar cells deposited in single chamber
Author(s) -
张晓丹,
孙福和,
许盛之,
王光红,
魏长春,
孙建,
侯国付,
耿新华,
熊绍珍,
赵颖
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1344
Subject(s) - materials science , microcrystalline , solar cell , quantum dot solar cell , silicon , optoelectronics , thin film , polymer solar cell , quantum efficiency , hydrogen , nanotechnology , chemistry , crystallography , organic chemistry
In-situ hydrogen plasma treating technique and burial method using microcrystalline silicon layer were used respectively to reduce the boron contamination in intrinsic layer for the p-i-n type microcrystalline silicon thin film solar cells deposited in single chamber. The measurement results of J-V relation and the quantum efficiency of solar cells proved that both of them improve the short circuit current density of solar cells to some extent. However, each method showed different effects on the other characteristic parameters of solar cells. By optimizing the hydrogen treating time and light trapping structure, single junction microcrystalline silicon thin film solar cell with 6.39% conversion efficiency has been fabricated in single chamber.