Open AccessEffects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma
Author(s) -
Bo Ke,
Lei Wang,
Ni Tian-Ling,
Fang Ding,
Mudi Chen,
Haiyang Zhou,
Xiao-Hui Wen,
Xiaodong Zhu
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1338
Subject(s) - materials science , electron cyclotron resonance , plasma , silicon , analytical chemistry (journal) , dc bias , biasing , silicon oxide , radio frequency , atomic physics , oxide , deposition (geology) , optoelectronics , physics , chemistry , telecommunications , silicon nitride , computer science , paleontology , chromatography , quantum mechanics , voltage , sediment , metallurgy , biology
Silicon oxide films were deposited in electron cyclotron resonance-radio frequency dual hybrid plasmas using a mixture of HMDSO and oxygen as source gases, and optical emission spectroscopy was employed to investigate the gas phase species in the plasma. It is found that both the deposition rate and the chemical bonds of films are significantly affected by the radio frequency bias. The deposition rate is slightly increased when a low direct current self-bias is applied, and is reduced with the increasing self-bias due to strengthened ion bombardment. The ratios of O to Si in the films deposited under the bias frequency of 400 kHz are above 2∶1, nearly the same as that under 13.56 MHz. However, the content of carbon under 400 kHz bias is much higher than that under 13.56 MHz. The reason is that the application of the high frequency bias of 13.56 MHz not only strengthens ion bombardment on the material surface, but also induces the variations of the bulk plasmas including the increase of O atom density, while the main effect of the bias of 400 kHz is only to strengthen ion bombardment.