Open AccessIntegration of organic thin-film transistor and polymer light-emitting diodes
Author(s) -
Jianhua Zou,
Linfeng Lan,
RuiXia Xu,
Wei Yang,
Junbiao Peng
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1275
Subject(s) - materials science , pedot:pss , pentacene , thin film transistor , optoelectronics , luminous efficacy , layer (electronics) , active layer , oled , electrode , transistor , threshold voltage , diode , polymer , nanotechnology , voltage , composite material , electrical engineering , engineering , chemistry
We investigated the technology and the related physical problems for integrating organic thin-film transistor OTFT and polymer light-emitting diode PLED. The OTFT uses Pentacene as the active medium, Ta2O5 as dielectric layer, Ta as gate electrode and Au as source/drain electrodes. The structure of PLED device is ITO/PEDOT:PEO polyethylene oxide/P-PPV or MEH-PPV/Ba/Al. The PEDOT:PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of -7.1 V and carrier mobility of 0.91 cm2/V·s. The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/m2, and the maximal luminous efficiency are 12.4 and 1.1 cd/A, respectively.