Integration of organic thin-film transistor and polymer light-emitting diodes | Zendy

Jianhua Zou | Zendy; Linfeng Lan | Zendy; Ruixia Xu | Zendy; Wei Yang | Zendy; Junbiao Peng | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Integration of organic thin-film transistor and polymer light-emitting diodes

Author(s) -

Jianhua Zou,

Linfeng Lan,

Ruixia Xu,

Wei Yang,

Junbiao Peng

Publication year - 2010

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.59.1275

Subject(s) - materials science , pedot:pss , pentacene , thin film transistor , optoelectronics , luminous efficacy , layer (electronics) , active layer , oled , electrode , transistor , threshold voltage , diode , polymer , nanotechnology , voltage , composite material , electrical engineering , engineering , chemistry

We investigated the technology and the related physical problems for integrating organic thin-film transistor OTFT and polymer light-emitting diode PLED. The OTFT uses Pentacene as the active medium, Ta2O5 as dielectric layer, Ta as gate electrode and Au as source/drain electrodes. The structure of PLED device is ITO/PEDOT:PEO polyethylene oxide/P-PPV or MEH-PPV/Ba/Al. The PEDOT:PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of -7.1 V and carrier mobility of 0.91 cm2/V·s. The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/m2, and the maximal luminous efficiency are 12.4 and 1.1 cd/A, respectively.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research