Open AccessGamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well
Author(s) -
Yu-Zhe Jin,
Hu Yi-Pei,
Xianghua Zeng,
Yang Yi-Jun <
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1258
Subject(s) - luminous flux , light emitting diode , optoelectronics , irradiation , materials science , luminous efficacy , luminous intensity , diode , radiation , wavelength , saturation (graph theory) , optics , quantum efficiency , physics , nanotechnology , light source , mathematics , layer (electronics) , combinatorics , nuclear physics
We study the irradiation effects of the GaN-based blue light-emitting diodesLEDs with InGaN/GaN multi-quantum well irradiated by five doses of 60Co 4×104 Ci at room temperature. From the analyses of the characteristics of the current-voltage I-V relation, current-luminous flux F-L relation, chromatic purity, luminous intensity, luminous flux, the full width at half maximum, and the wavelength of LEDs samples before and after irradiation, we obtain the effects of γ irradiation on the devices. It shows that the consistency and uniformity of the samples become worse after irradiation. At the 20 mA working current, the luminous intensity reduces by 90% and the luminous flux falls by 40% at the maximum total dose. The quantity τ0Kγ describing the radiation hardness of the LEDs is equal to 4.039×10-7 rad·s-1, and the saturation current increases at lower positive bias <2.6 V with the increasing total dose.