Open AccessImproved properties of light emitting diode by rough p-GaN grown at lower temperature
Author(s) -
Xing Yan-Hui,
Han Jun,
Jun Deng,
Jianjun Li,
Xu Chen,
Shen Guang-di
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1233
Subject(s) - materials science , molar ratio , chemical vapor deposition , sapphire , light emitting diode , diode , layer (electronics) , crystal (programming language) , metalorganic vapour phase epitaxy , deposition (geology) , flux (metallurgy) , morphology (biology) , metal , analytical chemistry (journal) , optoelectronics , optics , composite material , chemistry , laser , epitaxy , metallurgy , physics , computer science , genetics , biology , paleontology , biochemistry , chromatography , programming language , catalysis , sediment
GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN: Mg materials were studied. When the molar ratio of CP2Mg and TMGa is between 1.4×10-3 and 2.5×10-3, the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly. When the molar ratio is 2.5×10-3the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser. Taking the p-GaN layer with molar ratio of CP2Mg and TMGa of 2.5×10-3 as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.