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Influence of defects on the coalescence of helium in titanium: An atomistic simulation
Author(s) -
Min Chen,
Qing Hou
Publication year - 2010
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1185
Subject(s) - vacancy defect , coalescence (physics) , cluster (spacecraft) , helium , materials science , atom (system on chip) , atomic physics , lattice (music) , molecular dynamics , condensed matter physics , physics , quantum mechanics , astrobiology , computer science , embedded system , programming language , acoustics
Molecular dynamics was employed to study the migration and coalescence of He atom and He dimmer in Ti lattice which contains He-vacancy cluster. The influence of the ratio of helium to vacancy He density of the cluster and the He number of the cluster on coalescence of He and He-vacancy cluster in Ti lattice is studied. It is found that anisotropic diffusion is independent of the He-vacancy cluster in Ti lattice. The coalescence of helium and He-vacancy cluster is mainly along the 001 direction. The coalescence of He dimmer and He-vacancy cluster is faster than the coalescence of He atom and He-vacancy cluster.

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