Open AccessControlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
Author(s) -
彭英才,
范志东,
白振华,
马蕾
Publication year - 2010
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.59.1169
Subject(s) - materials science , nanowire , silicon , vapor–liquid–solid method , silicon nanowires , annealing (glass) , substrate (aquarium) , nanotechnology , chemical engineering , optoelectronics , composite material , oceanography , geology , engineering
High quality silicon nanowires SiNWs were grown directly from n-111 silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30—60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.