
Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study
Author(s) -
Lei Zheng,
Huang Bai-Biao,
Wei Ji-yong
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.8612
Subject(s) - nanoclusters , materials science , silicon , fourier transform infrared spectroscopy , silicon oxide , analytical chemistry (journal) , infrared , oxide , infrared spectroscopy , chemical vapor deposition , spectroscopy , photoluminescence , nanotechnology , chemical engineering , optoelectronics , optics , chemistry , silicon nitride , physics , organic chemistry , quantum mechanics , engineering , metallurgy , chromatography
Silicon oxide nanocluster and C-Si-O nanospheres are fabricated by the chemical vapor deposition method at 1100℃in flowing N2/H2 atmosphere using the ferrcene and the silicon oil 201 as the raw material and the catalyzer, respcetively. The silicon oxide nanowires are uniform with diameter of 5—40 nm and length up to hundreds of nanometer. The diameter of the C-Si-O solid-nanospheres is 100—300 nm. SEMTEMEDSFTIR and PL were used to characterize the microstructurecomposition and optical propertics of the nanocluster and the C-Si-O nanospheres. Energy dispersive X-ray spectrum analysis reveals that the C-Si-O nanospheres consist of CSi and O elements in an atomic ratio of approximately 1.13∶1∶2.35. The nanoclusters show IR absorption peaks at 474802 and 1100 cm-1. The PL peak of the nanoclusters is at 440 nm. It is very curious that the PL of the C-Si-O solid-nanospheres possesses the redgreen and blue——trichromic luminescent peeks.