Open AccessElectronic transport properties of the multilayer structure double spin-filter tunnel junction
Author(s) -
Jin Lian,
Lin Zhu,
Ling Li,
Zuowei Xie
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.8577
Subject(s) - condensed matter physics , magnetoresistance , spin–orbit interaction , tunnel magnetoresistance , insulator (electricity) , materials science , conductance , semiconductor , magnetic moment , coupling (piping) , ferromagnetism , physics , magnetic field , optoelectronics , quantum mechanics , metallurgy
Based on the transfer matrix method and the quantum coherent transport theory of Mireles and Kirczenow, the effects of the Rashba spin-orbit coupling and the spin-filter on the electronic transport properties in the NM/FS1/I/FS2/NMNM represents the nonmagnetic metal layer, I represents the nonmagnetic insulator layer, and FS represents the magnetic semiconductor layerdouble spin-filter tunnel junction are investigated. The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance TMR and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer. The results indicate that: in the presence of the spin-filter effect and the Rashba spin-orbit coupling interaction in the magnetic semiconductor layer, large TMR can be obtained in this double spin-filter junction. With the strength of Rashba spin-orbit coupling increasing, the tunnel magnetoresistance and conductance exhibit rapidly oscillating behavior and the oscillation period decreases gradually.