Determination of electron diffusion length in HgCdTe photodiodes using laser beam induced current | Zendy

Fei Yin | Zendy; Weida Hu | Zendy; Quan Zhi-Jue | Zendy; Bo Zhang | Zendy; Hu Xiao-Ning | Zendy; Zhifeng Li | Zendy; Xiaohong Chen | Zendy; Wei Lü | Zendy

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Determination of electron diffusion length in HgCdTe photodiodes using laser beam induced current

Author(s) -

Fei Yin,

Weida Hu,

Quan Zhi-Jue,

Bo Zhang,

Hu Xiao-Ning,

Zhifeng Li,

Xiaohong Chen,

Wei Lü

Publication year - 2009

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.58.7884

Subject(s) - photodiode , diffusion , electron , optics , materials science , laser , beam (structure) , cathode ray , optoelectronics , current (fluid) , atomic physics , physics , nuclear physics , thermodynamics

The standard diffusion length Lp test procedure is apt to damage the p-n junction, so we often use characteristic decay length L obtained by laser beam induced current　LBIC instead of Lp. Two dimensional modeling is used to get the relations of L and Lp. Calculated L/Lp ratio is about 1.1, and it is not affected by doping concentration, Shockley-Read-Hall SRH lifetime and mobility. For HgCdTe photodiodes, we get characteristic decay length from the LBIC experiment, and get the true diffusion length by division by the ratio 1.1.

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