Open AccessDetermination of electron diffusion length in HgCdTe photodiodes using laser beam induced current
Author(s) -
Fei Yin,
Weida Hu,
Quan Zhi-Jue,
Chao Zhang,
Hu Xiao-Ning,
Zhifeng Li,
Xiaoshuang Chen,
Wei Lü
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7884
Subject(s) - photodiode , diffusion , electron , optics , materials science , laser , beam (structure) , cathode ray , optoelectronics , current (fluid) , atomic physics , physics , nuclear physics , thermodynamics
The standard diffusion length Lp test procedure is apt to damage the p-n junction, so we often use characteristic decay length L obtained by laser beam induced current LBIC instead of Lp. Two dimensional modeling is used to get the relations of L and Lp. Calculated L/Lp ratio is about 1.1, and it is not affected by doping concentration, Shockley-Read-Hall SRH lifetime and mobility. For HgCdTe photodiodes, we get characteristic decay length from the LBIC experiment, and get the true diffusion length by division by the ratio 1.1.