
Growth of graphene structure on 6H-SiC(0001): Molecular dynamics study
Author(s) -
Tang Chao,
Jiacai Lu,
Lijun Meng,
Limei Sun,
Kaiwang Zhang,
Jianxin Zhong
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7815
Subject(s) - graphene , materials science , sublimation (psychology) , annealing (glass) , molecular dynamics , bilayer graphene , monolayer , chemical physics , bilayer , graphene nanoribbons , nanotechnology , composite material , computational chemistry , membrane , chemistry , psychology , biochemistry , psychotherapist
The growth process of graphene structure on 6H-iC0001 surface has been studied using the classical molecular dynamics MD simulation and the simulated annealing technique. We show that carbon atoms of the 6H-iC0001 subsurface after sublimation of Si atoms can be self-organized to form local monolayer graphene structures. This process is similar to the formation of graphene on the 6H-iC0001 surface, depending strongly on annealing temperature and coverage of carbon atoms on the SiC0001surface. The local graphene structures can be formed on 6H-iC0001as the annealing temperature is around 1400 K. This transformation temperature is in good agreement with experimental observations 1080 ℃, but is lower than that of growing graphene on SiC0001 surface T≈1450 K. In addition, not only single layer but also bilayer graphene structure can be formed, associated with the increase of the coverage of carbon atoms on SiC0001surface.