Open AccessA study of RHEED pattern from the epitaxial growth of Si-Ge crystal
Author(s) -
Chong Zhou,
Hui Ye,
Lei Zhang,
Huang-Fu You-Rui,
Xu Liu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7765
Subject(s) - reflection high energy electron diffraction , electron diffraction , epitaxy , crystallite , materials science , reflection (computer programming) , crystal (programming language) , crystal growth , crystallography , diffraction , transmission electron microscopy , condensed matter physics , optics , physics , chemistry , nanotechnology , programming language , layer (electronics) , computer science
The patterns of Reflection high energy electron diffraction RHEED from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetical diffraction theory of crystal. The transmission pattern is studied and interpreted, which relates to the rough surface after crystal growth. The RHEED patterns of polycrystalline rings and twin crystal and their evolvements are analyzed with respec to the epitaxial growth conditions.