Open AccessEffects of p-seeding layer on the performance of microcrystalline silicon solar cells deposited in single chamber
Author(s) -
Guanghong Wang,
Xiaodan Zhang,
Shengzhi Xu,
Fangyuan Sun,
Qiang Yue,
Changchun Wei,
Jian Sun,
Xin Geng,
Xiong Shao-Zhen,
Ying Zhao
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7294
Subject(s) - seeding , materials science , layer (electronics) , microcrystalline , chemical vapor deposition , deposition (geology) , silicon , plasma enhanced chemical vapor deposition , plasma , energy conversion efficiency , solar cell , optoelectronics , analytical chemistry (journal) , chemical engineering , composite material , chromatography , chemistry , physics , crystallography , paleontology , quantum mechanics , sediment , engineering , biology , aerospace engineering
The p-i-n type μc-Si:H solar cells were prepared in a single chamber using very high frequency plasma enhanced chemical vapor deposition technique. Boron cross-contamination between p-layer and subsequent i-layer seriously affects the device performance. The effects of p-seeding on the μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated.The p-seeding method was mainly realized by relatively high hydrogen rich plasma. It has been demonstrated that p-seeding can improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer and reduce boron contamination. Through the optimization of p-seeding layer technique, a-Si:H/μc-Si:H tandem solar cell with 881% 1 cm2 conversion efficiency has been fabricated in single chamber.