Open AccessHigh rate growth and electronic property of μc-Si:H
Author(s) -
Chengmin Shen,
Jingxiao Lu,
Yongsheng Chen
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7288
Subject(s) - materials science , microcrystalline silicon , thin film , plasma enhanced chemical vapor deposition , deposition (geology) , microcrystalline , volumetric flow rate , chemical vapor deposition , analytical chemistry (journal) , activation energy , growth rate , silicon , nanotechnology , optoelectronics , crystalline silicon , amorphous silicon , crystallography , chemistry , thermodynamics , paleontology , physics , chromatography , sediment , biology , geometry , mathematics
The deposition parameters of hydrogenated microcrystalline silicon μc-Si:H films were optimized for two factors, the siliane concentration and total flow rate, under high deposition power density and high deposition pressure by very high frequency plasma enhanced chemical vapor depositionVHF-PECVD.The device-grade film with activation energy of 047 eV was finally prepared at a rate of 142 nm/s when the siliane concentration was 45% and the total flow rate was 100 sccm.Meanwhile,the deposition rate of microcrystalline thin films has reached 21 nm/s under 600 Pa. We have researched the electronic property and the conductivity of thin films by use of grain boundary trapping model and statistical shift of Fermi level model respectively. Moreover, we analyzed the effect of post-oxygenation on the electronic performance of thin films.