Open AccessInfluence of growth temperature on properties of AlGaInN quaternary epilayers
Author(s) -
Liu Qi-Jia,
Shao Yong,
Wu Zhen-Long,
Xumin Zhou,
Feng Xu,
Bin Liu,
Xie Zili,
Peng Chen
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7194
Subject(s) - metalorganic vapour phase epitaxy , materials science , nucleation , chemical vapor deposition , indium , sapphire , gallium , desorption , aluminium , nitride , growth rate , gallium nitride , indium nitride , analytical chemistry (journal) , epitaxy , optoelectronics , nanotechnology , chemistry , composite material , layer (electronics) , laser , metallurgy , optics , physics , organic chemistry , adsorption , geometry , mathematics , chromatography
Aluminum gallium indium nitrideAlGaInN quaternary epilayers were prepared by metalorganic chemical vapor deposition MOCVD on c-plane sapphire α-Al2O3 substrates. Three samples were grown under different temperatures of 800 ℃850 ℃ and 900 ℃. It is found that the In composition monotonically decreases with the increasing growth temperaturewhile the Al composition is nearly invariable. The V-pits appeared when the growth temperature increases to 850 ℃, and the size and density of V-pits drastically decrease and the nucleation of V-pits is passivated when the growth temperature rises to 900 ℃ due to the desorption enhancement of segregated In atoms.