Open AccessNon-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor
Author(s) -
Weihua Li,
Yiqi Zhang,
Lan Du,
Junlin Bao
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7183
Subject(s) - non gaussianity , flicker noise , noise (video) , monte carlo method , field effect transistor , physics , gaussian noise , materials science , transistor , statistical physics , condensed matter physics , voltage , optoelectronics , noise figure , quantum mechanics , statistics , mathematics , computer science , algorithm , amplifier , cmos , cosmic microwave background , anisotropy , artificial intelligence , image (mathematics)
On the basis of the number fluctuation model of n-type metal oxide semiconductor field effect transistor nMOSFETnon-Gaussianity of noise in nMOSFET was studied by the quadratic sum of the bicoherencewhich belongs to higher order statistics. Comparing nMOSFETs test noise with Monte Carlo simulative noisewe proved that there is non-Gaussianity in nMOSFTs noise, that the noises non-Gaussian degree in small size devices is stronger than that in large size devices, and that the non-Gaussian degree of nMOSFTs noise in strong inversion and linear regime increase with the drain-source voltage. The physical mechanism of nMOSFET noise is discussed from Monte Carlo simulation and the central limit theorem.