Open AccessCalculation of Raman shifts of Si（1-x）Gex and amorphous silicon using Keating model
Author(s) -
段宝兴,
杨银堂
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7114
Subject(s) - raman spectroscopy , silicon , materials science , amorphous solid , raman scattering , phonon , amorphous silicon , condensed matter physics , crystalline silicon , crystallography , physics , optics , chemistry , metallurgy
The Raman shifts of Si—Si Ge—Ge and Si—Ge in Si1-xGex alloys are calculated by Keating model. The calculated Raman shifts are 4027541339 and 38815 cm-1 when the concentrations of Ge are 01 05 and 09 respectively. These results are consistent with the reported experimental results which indicates the validity of the Keating model for obtaining the Raman frequency of strained materials by changing the elastic coefficients of stretching and compression and bond-bending interaction. The single-phonon scattering peak at 477029 cm-1 in amorphous silicon is obtained for the first time by Keating model, which is in agreement with the result of 4800 cm-1 from the literature, indicating that the atoms of amorphous silicon as a whole are stretched compared with that of crystalline silicon.