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Material growth and characterization of terahertz quantum-cascade lasers
Author(s) -
Chang Su Jun,
Li Hua,
Han Yingjun,
ZhiYong Tan,
Cao Jun-Cheng
Publication year - 2009
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.7083
Subject(s) - terahertz radiation , quantum cascade laser , cascade , materials science , molecular beam epitaxy , laser , optoelectronics , bolometer , characterization (materials science) , phonon , epitaxy , optics , physics , condensed matter physics , nanotechnology , detector , chemistry , chromatography , layer (electronics)
We realized the growth of terahertz quantum-cascade laser THz QCL by gas source molecular beam epitaxy GSMBE. Electrochemical capacitance-voltage method Hall measurement and high-resolution x-ray diffraction were used to evaluate the crystalline quality of the THz QCL active region. Meanwhile we used an ensemble Monte Carlo method to investigate the carrier transport characteristics in a resonant-phonon THz QCL. Level alignment and electron motion under different applied biases are discussed in detail.

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