Open AccessDeposition of orthorhombic boron nitride films by plasma-enhanced pulsed laser deposition
Author(s) -
Weiqing Li
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.6530
Subject(s) - boron nitride , orthorhombic crystal system , materials science , pulsed laser deposition , fourier transform infrared spectroscopy , analytical chemistry (journal) , diffraction , deposition (geology) , substrate (aquarium) , thin film , boron , optics , nanotechnology , chemistry , physics , paleontology , organic chemistry , sediment , biology , oceanography , chromatography , geology
In this paper, high quality orthorhombic boron nitride o-BN films were prepared on Si100 substrate by plasma-enhanced pulsed laser deposition PE-PLD for the first time. The films were characterized by Fourier transform infrared FTIR spectroscopyglancing-angle X-ray diffraction XRD and atomic force microscopic AFM. In the FTIR spectrum of the film, we can see three characteristic peaks around 1189cm-1, 1585cm-1 and 1450cm-1 of o-BN. The diffraction peaks 111, 020, 021, 310 and 243 all appeared in XRD, especially 243 and 310 crystal plane diffraction were very strong. The surface morphology was closely observed by AFM photograph.