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Modulated free carrier absorption characterization of semiconductor wafers by frequency scans at different pump-to-probe separations
Author(s) -
Wei Li,
Bincheng Li
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.6506
Subject(s) - wafer , free carrier absorption , semiconductor , materials science , carrier lifetime , amplitude , phase (matter) , modulation (music) , amplitude modulation , absorption (acoustics) , optoelectronics , semiconductor device , optics , frequency modulation , silicon , physics , nanotechnology , radio frequency , acoustics , computer science , telecommunications , layer (electronics) , quantum mechanics , composite material
Based on a three-dimensional modulated free carrier absorption MFCA modelsimulation was performed to investigate the dependences of MFCA amplitude and phase on the electronic transport properties the carrier lifetimethe carrier diffusivityand the front surface recombination velocity of semiconductor wafers at different pump-to-probe separations and different modulation frequencies. Experiments were performed with a silicon waferin which amplitude and phase were recorded as functions of modulation frequencies at several different two-beam separations. The electronic transport properties of semiconductor wafers were determined simultaneously via multi-parameter fitting procedure. These results showed that the method is capable of improving the measurement precision of the simultaneous multi-parameter determination of transport properties.

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