Open AccessHigh performance resonant cavity light emitting diodes for POF application
Author(s) -
Jianjun Li,
Yang Zhen,
Junbo Han,
Jun Deng,
Deshu Zou,
Kang Yu-Zhu,
Ding Liang,
Shen Guang-di
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.6304
Subject(s) - materials science , diode , light emitting diode , optoelectronics , wavelength , transfer matrix method (optics) , optics , resonant cavity , laser , physics
A device structure of resonant cavity light emitting diodes RCLED at 650nm wavelength was proposed by using AlGaAs as the n-type bottom DBR, AlGaInP as the p-type top DBR, and GaInP/AlGaInP MQW as the active region. The device was designed according to the transfer matrix method, and both RCLED and normal LED were fabricated for comparison. Results showed that the efficiency of RCLED is 30% higher than the normal LED, and the peak wavelength of RCLED changed only 1nm when the driving current increased from 3mA to 30mA, compared with that of 7nm for the normal LED. Meanwhile, RCLED has a narrower spectrum and a smaller far field divergence angle.