Open AccessImproving the quantum well properties with n-type InGaN/GaN superlattices layer
Author(s) -
Xing Yan-Hui,
Jun Deng,
Jun Han,
Jianjun Li,
Shen Guang-di
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.590
Subject(s) - superlattice , materials science , optoelectronics , photoluminescence , quantum well , layer (electronics) , light emitting diode , chemical vapor deposition , wide bandgap semiconductor , optics , nanotechnology , laser , physics
InGaN/GaN quantum wells have been grown by metal-organic chemical vapor deposition. InGaN/GaN quantum well with n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer were studied. By introducing n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer, the strain in quantum well active area was released, the surface morphology was improved and the density of V-type defect was redued. It was also found that the multiple quantum well photoluminescence intensity and the radiation efficiency of light emitting diodes were both higher than that of the structure without InGaN/GaN superlattice layer.