Open AccessPhotoluminescence characteristics of Zn1-xMgxO films
Author(s) -
QingQing Fang,
Weina Wang,
Jun Zhou,
Shengnan Wang,
Yan Fang-Liang,
Yanmei Liu,
Yan Li,
Lyu Qing-Rong
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.5836
Subject(s) - photoluminescence , materials science , ultraviolet , analytical chemistry (journal) , emission intensity , zinc , doping , oxygen , pulsed laser deposition , blueshift , vacancy defect , thin film , optoelectronics , nanotechnology , chemistry , crystallography , organic chemistry , chromatography , metallurgy
Single-crystalline Zn1-xMgxO thin films with c-axis orientation have been deposited on Si100 substrates by pulsed laser deposition. The photoluminescence characteristics of the films are studied by fluorescence spectrometer. The results show that the ultraviolet emission peak has a blue shift and the intensity weakens with the increasing content of Mg. At the same timethe intensity of defect emission increases with increasing content of Mg. Some local bound states were introduced by Mg-doping. For the samples grown in oxygen atmospherethe results show that both the ultraviolet emission peak and green emission peak are enhancedbut the value of R reduced and the ultraviolet emission peak has a red shift. The study of green-emitting mechanism indicated that the green emission band mainly depends on zinc vacancysubstitutional O on the zinc site OZn and interstitial oxygen vacancies Oi. Green emission band is composed of many defect-peaksand its movement as a whole mobile is due to the change of relative intensities of individual defect-peaks.