
Luminescence characteristics and crystallographic sites of Ce3+ in LiBaBO3
Author(s) -
Panlai Li,
Zhijun Wang,
Ying Wang,
Zhaochu Yang,
Qi Guo,
Xu Li,
Yanmin Yang,
Guangsheng Fu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.5831
Subject(s) - phosphor , chromaticity , luminescence , materials science , doping , analytical chemistry (journal) , emission spectrum , quenching (fluorescence) , excitation , emission intensity , light emitting diode , optoelectronics , fluorescence , optics , chemistry , spectral line , physics , chromatography , quantum mechanics , astronomy
LiBaBO3Ce3+ phosphor was prepared by solid-state methodand its luminescence characteristics were investigated. LiBaBO3Ce3+ phosphor shows one asymmetrical band at 440 nm. Monitored at 440 nmthe excitation spectrum has a broad band at 370 nm. The crystallographic sites of Ce3+ in LiBaBO3 were calculated by van Uitert formulathe results show that the emission band centered at 438 nm originates from the Ce3+ center of the nine compoundsand at 469 nm originates from the Ce3+ center of the eight compounds. The effect of Ce3+ concentration on luminescent intensity of LiBaBO3Ce3+ phosphor was investigatedthe result shows that the luminescent intensity firstly increases with increasing Ce3+ concentrationand reaches the maximal value at 3mol% Ce3+, then decreases. The concentration quenching mechanism is the dipole-dipole interaction by Dexter theory. Under the condition of doping charge compensator Li+Na+ or K+the emission intensity of LiBaBO3Ce3+ was all heightened. The relative emission spectrum of the InGaN-based LiBaBO3Ce3+ light emitting diodeLED was investigatedand the CIE chromaticity of InGaN-based LiBaBO3Ce3+ LED is x=0.291y=0.297and shows the blue white emission.