Open AccessThermal stability of structure and properties of CHx doped SiCOH low dielectric constant films
Author(s) -
Du Jie,
Chao Ye,
Yu Xiao-Zhu,
Haiyan Zhang,
Ning Zhao-Yuan
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.575
Subject(s) - materials science , dielectric , microstructure , electron cyclotron resonance , desorption , analytical chemistry (journal) , thermal stability , doping , thermal desorption , composite material , capacitance , plasma , chemical engineering , electrode , optoelectronics , adsorption , chemistry , chromatography , engineering , physics , quantum mechanics
This paper investigates the effect of vacuum thermal treatment on current-voltage (I-V) and capacitance-voltage (C-V) characteristics, hydrophobic properties and microstructure of CH4 doped SiCOH low dielectric constant films deposited by decamethylcyclopentasiloxane (D5) electron cyclotron resonance plasma. The results show that the desorption of thermally unstable CHx groups during the heat treatment can lead to the decrease of leakage current, the variation of SiCOH/Si interface state and the decrease of surface roughness. However, the desorption of CHx groups also leads to the deterioration of hydrophobic property.