Open AccessEffect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth
Author(s) -
Qiu Sheng-Hua,
Chengzhao Chen,
Cui-Qing Liu,
Wu Yuan-Dan,
Ping Li,
Xuelian Lin,
Huang Chong,
Chao Yu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.565
Subject(s) - dilution , materials science , hydrogen , silicon , crystalline silicon , thin film , chemical vapor deposition , analytical chemistry (journal) , deposition (geology) , chemical engineering , nanotechnology , chemistry , metallurgy , organic chemistry , thermodynamics , paleontology , physics , sediment , biology , engineering
Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at a pressure of 230 Pa. The effect of hydrogen dilution on their growth rate and crystalline properties were investigated. The experimental results indicate that the crystalline fraction and grain size increase with increasing hydrogen dilution ratio, and when the hydrogen dilution ratio increases to 99%, the crystalline fraction reaches 70%. The deposition rate decreases with increasing hydrogen dilution ratio, when the hydrogen dilution ratio decreases from 99% to 95%, the deposition rate of thin film increases from 0.3nm/s to 0.8nm/s.