Open AccessFinite element analysis on stress distribution in buried quantum dots
Author(s) -
Wei Zhou,
Chengyu Cai,
Chongyu Wang,
Yin Shu-yuan
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.5585
Subject(s) - quantum dot , superlattice , materials science , condensed matter physics , elasticity (physics) , piezoelectricity , stress (linguistics) , anisotropy , semiconductor , physics , nanotechnology , optoelectronics , composite material , optics , linguistics , philosophy
The stacked, self-assembled and vertically aligned quantum dot superlattices are fabricated by alternating growth of substrate and epitaxial materials, the stress/strain fields in the buried quantum dots can influence their optical and piezoelectric properties and mechanical stability. The distributions of stresses, strains, hydrostatic strains and biaxial strains in buried strain self-assembled Ge/Si semiconductor quantum dot are investigated based on the theory of anisotropy elasticity and also compared with those of free-standing quantum dot. The sameness and difference of the stresses/strains between the buried and the free-standing quantum dots, and the influence of cap layer on the stress/strain fields in quantum dots are given.