Open AccessAnisotropy of hole effective mass of strained Si/(001)Si1-xGex
Author(s) -
Jianjun Song,
Heming Zhang,
Xuan Rong-Xi,
Huiyong Hu,
Xianying Dai
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4958
Subject(s) - effective mass (spring–mass system) , materials science , valence band , pmos logic , anisotropy , condensed matter physics , conduction band , electron mobility , valence (chemistry) , wave vector , optoelectronics , band gap , voltage , physics , transistor , optics , electron , quantum mechanics
There has been much interest in the Si-based strained materials lately, which was widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band Ek-k relation of strained Si/001Si1-xGex, the hole effective mass along arbitrarily k wavevector direction were obtained. It was found that in comparison with relaxed Si, the obvious change occurs in the hole effective mass of first and second valence band in strained Si/001Si1-xGex along specific k wavevector directions. The hole effective mass plays a significant role in the hole mobility enhancement. The results can supply valuable references to the investigation on the Si-based strained PMOS device performance and the conduction channel design related to stress and orientation.