Open AccessStudy of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage
Author(s) -
Guangcai Yuan,
Zheng Xu,
Suling Zhao,
Fujun Zhang,
Ning Xu,
Qinjun Sun,
Xurong Xu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4941
Subject(s) - materials science , pentacene , optoelectronics , octadecyltrichlorosilane , thin film transistor , buffer (optical fiber) , organic semiconductor , threshold voltage , active layer , transistor , monolayer , field effect transistor , layer (electronics) , voltage , nanotechnology , electrical engineering , engineering
We have fabricated the top-contact organic thin film transistors OTFTs with, a 60 nm thick pentacene films as active layer and a 120 nm thermal growth SiO2 as gate insulator. Through using different self-assembled monolayers ,such as octadecyltrichlorosilane OTS and phenyltrimethoxysilane PhTMS, as a buffer between the organic semiconductor active layer and gate insulator, we studied the effect of different buffers on the performance of OTFTs device. At the same time, we also investigated the field-effect behavior and carrier transport mechanism of OTFTs device with PhTMS buffer under low gate modulation voltage. When |VGS|IDS of OTFTs device keeping balance. But the OTFT device still has good output characteristics, with the field-effect mobility μEF of 3.22×10-3 cm2/Vs, on/off current ratio of 1.43×102, and threshold voltage VTH of -0.66 V.