Open AccessThe threshold voltage of SiC Schottky barrier source/drain MOSFET
Author(s) -
Xiaoyan Tang,
Yimen Zhang,
Yuming Zhang
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.494
Subject(s) - threshold voltage , mosfet , drain induced barrier lowering , channel length modulation , materials science , schottky barrier , reverse short channel effect , optoelectronics , voltage , schottky diode , overdrive voltage , channel (broadcasting) , short channel effect , electrical engineering , transistor , engineering , diode
Threshold voltage of SiC Schottky barrier source/drain MOSFET (SBSD MOSFETs) is different from the threshold voltage of traditional MOSFETs. Based on a comprehensive analysis of the operational mechanismthe threshold voltage of SBSD MOSFET is extracted and analyzed with 2-D simulator ISE. The threshold voltage of the device is defined as the gate voltage at which carriers from the source contact enter the channel by field emission while the channel is strongly inverted.