Open AccessThe influence of doposition conditions on the structrure of ZnTe/ZnTe:Cu thin films and the properties of CdTe cells
Author(s) -
Zhong Zheng-Xiang,
Jiagui Zheng,
Zhong Yong-qiang,
Fan Yang,
Lianghuan Feng,
Wei Cai,
Yaping Cai,
Jingquan Zhang,
Bing Li,
Lei Zhi,
Wei Li,
Lili Wu
Publication year - 2009
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4920
Subject(s) - materials science , cadmium telluride photovoltaics , crystallite , x ray photoelectron spectroscopy , thin film , vaporization , evaporation , diode , deposition (geology) , analytical chemistry (journal) , optoelectronics , chemical engineering , nanotechnology , metallurgy , chemistry , paleontology , physics , organic chemistry , chromatography , sediment , biology , engineering , thermodynamics
Polycrystalline film of ZnTe/ZnTe:Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by XRD,XPS, C-V and I-V analysis. The results indicate that, 1 the deposition temeperature has less effecton the structure of the film ZnTe/ZnTe:Cu, 2 the fact that the Cu concentration in the film deposited at 100℃ raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier XD,smaller capacitance, better diode characteristic and larger conversion efficiency.
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