Open AccessUltrafast rising of output electric impulse of lock-on model of semi-insulated GaAs photoconductive switches
Author(s) -
Wei Shi,
Guohui Qu,
Xinmei Wang
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.477
Subject(s) - ultrashort pulse , materials science , charge carrier , optoelectronics , photoconductivity , impulse (physics) , anode , voltage , time domain , current (fluid) , electron , pulse (music) , laser , optics , physics , electrode , computer science , quantum mechanics , computer vision , thermodynamics
In the lock-on model of semi-insulating GaAs photoconductive switchesthe output current pulse has ultra-fast rise characterthe rise time can be even less than that of the laser pulse. Fluid model is used to simulate the transport of photo-induced carrier. The results show that photo-activated charge domain formed in the transport process of carriers is the main cause of ultra-fast rise time. Further studies on the establishment of photo-activated charge domain and the absorption process show1. The photo-activated charge domains during the establishment enhance the electron density gradient. 2. When the photo-activated charge domains are absorbed by the anoderapid decline of bias electric voltage will accelerate the rise rate of output current pulse. Due to the two processes, the output current pulse in the lock-on model shows ultra-fast rise character.