Open AccessEffect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
Author(s) -
Jiang Zhong-Wei,
Wenxin Wang,
Hanchao Gao,
Hui Li,
Tao He,
Yang Cheng-Liang,
Hong Chen,
Jian Zhou
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.471
Subject(s) - quantum dot , materials science , photoluminescence , atomic force microscopy , layer (electronics) , buffer (optical fiber) , optoelectronics , strain (injury) , condensed matter physics , nanotechnology , physics , medicine , telecommunications , computer science
Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence (PL) and atomic force microscopy (AFM). The QD density varies from 1.2×10cm-2 to 8.0×10cm-2 due to the influence of the lattice mismatch. The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratiowhich resulted in the red-shift of the emission peaks.For the sample of 5ML GaAs thin film the ground state transition is shifted to nearly 1300nm at room temperature.