Open AccessEffect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot
Author(s) -
Wu Hui-Ting,
Hailong Wang,
Jiang Li-Ming
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.465
Subject(s) - quantum dot , effective mass (spring–mass system) , radius , electric field , impurity , wave function , condensed matter physics , physics , electron , binding energy , field (mathematics) , electronic structure , quantum well , materials science , optoelectronics , atomic physics , quantum mechanics , laser , mathematics , pure mathematics , computer security , computer science
In this paperwe have calculated the impurity electronic states and the binding energy with the variation of the quantum dot radius and Al content in GaN/AlxGa1-xN spherical quantum dot (QD) using the plane wave method. The modification of the energy states is discussed when the difference in effective electron mass in GaN and AlxGa1-xN is taken into account. The results show that the difference in effective mass can not be neglected when Al content is large. In additionwith the consideration of the difference in effective masswe investigate the binding energy as function of quantum dot radius, impurity position and external electric field. The results are meaningful and can be widely applied in the design of optoelectronic devices.