Open AccessExperimental investigation on formation of Al-Si clusters and nanocrystals in the segregation of ion-implanted Al on Si(100)
Author(s) -
高皓,
廖龙忠,
张朝晖
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.427
Subject(s) - annealing (glass) , materials science , nanocrystal , alloy , ion , epitaxy , ion implantation , chemical physics , crystallography , chemical engineering , nanotechnology , metallurgy , chemistry , organic chemistry , layer (electronics) , engineering
By high-temperature annealing of Si(100) samples containing ion-implanted Al atomsthermodynamic behaviors of the segregated Al atoms on the surfaces have been investigated. Experiments of annealing the samples at 900℃ show that Al and Si atoms conbine to form Al-Si clusters with size of 2—3nmwhile segregated Al atoms form epitaxial Al film and islands on Si(100) surfaces. Further annealing at 1200℃ indicates that rapid cooling of samples leads to formation of cubic Al4Si grains of 20—30nm size. The Al-Si clusters seem to be independent of the substrate structure and tend to come togetherwhich are probably the precursor of the Al-Si alloy formed in the process of the high-temperature annealing and rapid cooling.