Open AccessInfluence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al2O3 multilayer
Author(s) -
Junzhuan Wang,
Shi Zhuo-Qiong,
Haonan Lou,
Zhang Xin-Luan,
Zuo Ze-Wen,
Lin Peng,
E. Ma,
Rong Zhang,
Zheng Yan,
Lu Fang,
Yi Wei Shi
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4243
Subject(s) - materials science , luminescence , photoluminescence , crystallization , annealing (glass) , doping , transmission electron microscopy , raman spectroscopy , raman scattering , nanocrystal , microstructure , analytical chemistry (journal) , optoelectronics , nanotechnology , chemical engineering , optics , composite material , chemistry , physics , chromatography , engineering
The crystallization evolution of the nanostructured Si ns-Si in the Er-doped Si/Al2O3 multilayer fabricated by using pulsed laser deposition technique and its effects on the Er3+ luminescence at 1.54 μm are investigated. Raman scattering and transmission electron microscopy measurements are used to characterize the microstructure evolution of the ns-Si during annealing treatment processes. The maximum photoluminescence intensity is obtained in the sample with ultrathin ns-Si sublayers annealed at 600—700 ℃, where the density, the size of Si nanocrystals, the interaction distance, and the optimized local environment for effectively activating the Er3+ are well controlled. From the analysis of the decay process of time-dependent luminescence, two decay channels are considered, the fast and slow decay channels. The bulk-like Si is responsible for the fast process and the Si nanocrystals are responsible for the slow decay process.