Open AccessPhotoluminescence properties of Ge-doped silica glass
Author(s) -
Xinghe Wang,
Yecheng Zhou
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4239
Subject(s) - photoluminescence , materials science , luminescence , doping , x ray photoelectron spectroscopy , silica glass , analytical chemistry (journal) , excited state , optoelectronics , chemical engineering , atomic physics , composite material , chemistry , chromatography , engineering , physics
Ge crystals doped in SiO2 glassy materials were formed by heating GeO2/SiO2 glass at 700 ℃ in the presence of hydrogen. The GeO2/SiO2 glass was prepared by the sol-gel technique. The Ge/SiO2 samples showed a special photoluminescence property to give off strong room temperature luminescence at 392 nm3.12 eV, secondary strong luminescence at 600 nm2.05 eV,and weak luminescence at 770 nm1.60 eV, when excited by 246nm 5.01 eV ultra-violet light. The structure of this new luminescence material was studied by XRD, XPS, and TEM techniques. The results show that the existences of nanometer-sized around 10 nm Ge and GeO crystals in the SiO2 may cause the three band photoluminescence property. As a comparison, there is only GeO2 in SiO2 glass before the heating plus reducing process, and the photoluminescence property is not found.