Open AccessESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD
Author(s) -
Peng Cheng,
Yuming Zhang,
Hui Guo,
Yimen Zhang,
Liao Yu-Long
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4214
Subject(s) - electron paramagnetic resonance , materials science , chemical vapor deposition , crystal (programming language) , homogeneous , analytical chemistry (journal) , condensed matter physics , optoelectronics , nuclear magnetic resonance , chemistry , thermodynamics , chromatography , computer science , programming language , physics
By using electron spin resonance ESR, the intrinsic defects in high-quality semi-insulating 4H-SiC prepared by low pressure chemistry vapor deposition LPCVD are investigated. In dark-field condition, the results show that the defects have the characteristics of VC and its complex compounds, while the absorption spectra are obviously asymmetry and have wider ESR half-width. The asymmetric chart and the wider ESR half-width are attributed to the higher testing temperature, non-homogeneous distribution of the defect concentration and the unsymmetrical crystal structure in 4H-SiC. The distributions of electrons have little effect on the ESR characteristic at the testing temperature of 110 K.