Open AccessEffect of 100 keV proton irradiation on photoemission of GaAs/Ge space solar cells
Author(s) -
Haidong Zhao,
Song He,
Sun Yan-zheng,
Sun Qiang,
Xiao Zhi-Bin,
Weitao Lyu,
Huang Caiyong,
Xiao Jing-Dong,
Yiyong Wu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.404
Subject(s) - irradiation , materials science , solar cell , fluence , proton , short circuit , open circuit voltage , optoelectronics , space environment , electron beam processing , carrier lifetime , spectral line , voltage , silicon , physics , quantum mechanics , geophysics , nuclear physics , astronomy
The experiment of GaAs/Ge solar cells co-irradiated by proton and electron was done in space environment simulation equipment. The materials of GaAs/Ge solar cell are irradiated by proton beam with fixed energy of 100keV and dose from 1×109 to 3×1012cm-2. The I-V characteristicspectral response and photoluminescence (PL) spectra were measured before and after irradiation in order to study the cells performance degradation induced by irradiation. The result indicated that the parameters such as short circuit current (Isc)open circuit voltage (Voc)maximum output power (Pmax) and fill factor (FF) all suffer degradation at different degrees as the irradiation fluence increases. The results show that proton irradiation induces a great damage in optical characteristics of the solar cellresulting from the large quantity of irradiation defects that would destroy crystal lattice integrity and reduce the diffusion distance of minority carrierand thus increase the surface recombination velocity. The damage extent of GaAs/Ge solar cell increases with proton dose in the ranges under investigation.