
Hole transport in polymer P3HT with different annealing temperatures
Author(s) -
Yin Li-Qin,
Junbiao Peng
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3456
Subject(s) - materials science , annealing (glass) , electron mobility , electric field , pedot:pss , condensed matter physics , analytical chemistry (journal) , optoelectronics , polymer , composite material , chemistry , physics , chromatography , quantum mechanics
Hole only devices were fabricated with the structure of ITO/PEDOT/P3HT poly3-hexylthiophene/Ag. The capacitance-frequency characteristics of samples annealed at different temperatures were investigated by admittance spectroscopy technique. Hole mobilities were calculated and it was found that the hole mobility could be pronouncedly influenced by annealing. The hole mobility was enhanced to the 10-3 cm2/Vs order after annealing, while the hole mobility of the unannealed sample was just of 10-4 cm2/Vs order. The hole mobility of the annealed sample is almost unchanged under different electric field. In contrast, the hole mobility of the annealed sample showed relatively significant change with the electric field.