Open AccessEffect of hydrofluoric acid etching time on Ni/6H-SiC contacts
Author(s) -
黄维,
陈之战,
陈博源,
张静玉,
严成锋,
肖兵,
施尔畏
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3443
Subject(s) - materials science , ohmic contact , hydrofluoric acid , auger electron spectroscopy , annealing (glass) , amorphous solid , etching (microfabrication) , isotropic etching , analytical chemistry (journal) , composite material , optoelectronics , layer (electronics) , metallurgy , crystallography , physics , chemistry , chromatography , nuclear physics
The effect of hydrofluoric acid HF etching time on Ni/6H-SiC ohmic contacts was investigated The as-deposited Ni/6H-SiC contacts prepared by 6H-SiC substrates which have been subjected to different HF etching time have different I-V characteristics For SiC substrates etched for less than 12 hours, the contacts were rectifying, and excellent linear curves were observed after high temperature thermal annealingX_ray diffraction, Auger electronic spectroscopy and low_energy reflection electron energy loss spectroscopy showed that Ni2Si and amorphous C were the main reaction products after annealing.For SiC substrate etched for 24 hours, the as-deposited Ni/6H-SiC contact was ohmic The carbon-enriched layer CEL on the SiC surface plays an important role in the formation of ohmic contact