Open AccessExperimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes
Author(s) -
Weijun Li,
Bo Zhang,
Xu Wen-Lan,
Wei Lü
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3421
Subject(s) - optoelectronics , light emitting diode , diode , quantum dot , quantum , materials science , quantum well , physics , optics , quantum mechanics , laser
A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.