Open AccessSpin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode
Author(s) -
Naiyun Tang
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3397
Subject(s) - condensed matter physics , spin polarization , quantum tunnelling , ferromagnetism , spin current , polarization (electrochemistry) , materials science , heterojunction , spin hall effect , spin (aerodynamics) , spintronics , diode , physics , optoelectronics , chemistry , electron , quantum mechanics , thermodynamics
The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostructure, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.