Open AccessElectronic and magnetic properties of p，n type dopant and Mn co-doped GaN
Author(s) -
Haiying Xing,
Guanghan Fan,
Zhou Tianming
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3324
Subject(s) - materials science , condensed matter physics , ferromagnetism , curie temperature , doping , dopant , density functional theory , magnetic semiconductor , impurity , spin (aerodynamics) , physics , optoelectronics , thermodynamics , quantum mechanics
Calculation of electronic structures and magnetic properties of Mg or ZnSiO and Mn co-doped GaN were carried out by means of first-principle plane-wave pesudopotential PWP based on density functional theory. Estimation of Curie temperature was achieved by using Heisenberg model in the mean-field approximation and Zener theoryrespectively. The spin polarized impurity bands of deep energy levels are found for several co-doped systems, which are half metallic and suitable for spin injectors. Compared with GaNMnp-type co-doped GaNMn-MgZn systems exhibit more stable ferromagnetic state and a significant increase in TC. Neverthelessn-type co-doped GaNMn-SiO systems fail to increase the TC and stability of ferromagnetic state.