Open AccessOptical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide
Author(s) -
Honghua Zhang,
Chonghong Zhang,
Bingsheng Li,
Lihong Zhou,
Yitao Yang,
Yunchong Fu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3302
Subject(s) - materials science , annealing (glass) , nucleation , ion implantation , silicon carbide , photoluminescence , crystallographic defect , vacancy defect , raman spectroscopy , radiation damage , helium , raman scattering , ion , irradiation , analytical chemistry (journal) , optoelectronics , crystallography , composite material , atomic physics , optics , chemistry , physics , organic chemistry , chromatography , nuclear physics
6H-SiC single crystal specimens were implanted at 600 K with 100 KeV He ions to three successively increasing fluences and subsequently annealed at different temperatures ranging from 600℃ to 1200℃ in vacuum. After the annealing, the samples were investigated by using Raman scattering spectroscopy and photoluminescence spectrometryrespectively. Both of the two methods showed that the damage induced by helium-ion-implantation in the lattice is closely related to the dose. The thermal annealing brings about recovery of the damageand different levels of damage require different annealing temperature to recover efficiently. It is indicated that different annealing stages involve different mechanismscorresponding to recombination of point defectsformation of He-vacancy complexesand nucleation and coarsening of bubblesrespectively. The experimental results indicate that high temperature implantation is an effective way to avoid amorphization of the implanted layer due to damage accumulation. Helium implantation can be used to introduce buried nanoscale cavities as the nucleation site for the buried oxide in a well defined region proposed for an alternative and more economical method of manufacturing SiC-on-Insulator SiCOI.