Photoinduced refractive index change effect of amorphous Sn-doped As2S8 film and its application in stripe waveguide fabrication | Zendy

Bei Sun | Zendy; Baoxue Chen | Zendy; Guorong Sui | Zendy; Guande Wang | Zendy; Zou Lin-Er | Zendy; Hiromi Hamanaka | Zendy; Mamoru Iso | Zendy

Open Access

Photoinduced refractive index change effect of amorphous Sn-doped As2S8 film and its application in stripe waveguide fabrication

Author(s) -

Bei Sun,

Baoxue Chen,

Guorong Sui,

Guande Wang,

Zou Lin-Er,

Hiromi Hamanaka,

Mamoru Iso

Publication year - 2009

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.58.3238

Subject(s) - materials science , refractive index , waveguide , fabrication , amorphous solid , optoelectronics , ultraviolet , doping , optics , semiconductor , excitation , irradiation , medicine , chemistry , alternative medicine , physics , organic chemistry , pathology , nuclear physics , electrical engineering , engineering

Photoinduced changes in refractive index and film thickness of amorphous Sn1As20S79 semiconductor film are studied experimentally. The emperical rules in as-evaporatedannealed and well-illuminated states are obtained respectively. An ultraviolet irradiation technique is presented and employed successfully to fabricate a Sn1As20S79 stripe waveguide, which shaws good characteristics of a waveguide under the 632.8nm guided mode excitation.

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