Open AccessPhotoinduced refractive index change effect of amorphous Sn-doped As2S8 film and its application in stripe waveguide fabrication
Author(s) -
B.Z. Sun,
Baoxue Chen,
Guorong Sui,
Guande Wang,
Zou Lin-Er,
H. Hamanaka,
Mamoru Iso
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.3238
Subject(s) - materials science , refractive index , waveguide , fabrication , amorphous solid , optoelectronics , ultraviolet , doping , optics , semiconductor , excitation , irradiation , medicine , chemistry , alternative medicine , physics , organic chemistry , pathology , nuclear physics , electrical engineering , engineering
Photoinduced changes in refractive index and film thickness of amorphous Sn1As20S79 semiconductor film are studied experimentally. The emperical rules in as-evaporatedannealed and well-illuminated states are obtained respectively. An ultraviolet irradiation technique is presented and employed successfully to fabricate a Sn1As20S79 stripe waveguide, which shaws good characteristics of a waveguide under the 632.8nm guided mode excitation.