Open AccessInfluence of wet etching on the morphologies of Si patterned substrates and ZnO epilayers
Author(s) -
Cui Xiu-Zhi,
Tianchong Zhang,
Mei Zeng-Xia,
Zhanglong Liu,
Yaoping Liu,
Yufeng Guo,
Su Xi-Yu,
Quan Xue,
Xian Du
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.309
Subject(s) - materials science , scanning electron microscope , substrate (aquarium) , fabrication , etching (microfabrication) , diffraction , optoelectronics , silicon , epitaxy , isotropic etching , molecular beam epitaxy , morphology (biology) , nanotechnology , chemical engineering , optics , composite material , layer (electronics) , medicine , oceanography , alternative medicine , physics , pathology , engineering , biology , genetics , geology
A ZnO film with two-dimensional periodic structure was grown on Si substrate by radio-frequency plasma-assisted molecular beam epitaxy. The influence of wet-chemical etching on Si (100) and Si (111) substrates patterned with dot arrays was investigated for achieving a ZnO film with good periodic structure. X-ray diffraction and scanning electron microscopy mesurements demonstrate better crystalline quality and surface morphology of ZnO film grown on Si (111) than that on Si (100). The results suggest that the growth method is feasible for the fabrication of ZnO film with good periodic structure.