Open AccessGamma-ray radiation effect on Ni/4H-SiC SBD
Author(s) -
Zhang Lin,
Han Chen,
Yuanming Ma,
Yimen Zhang,
Yuming Zhang
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.2737
Subject(s) - materials science , schottky barrier , irradiation , radiation , optoelectronics , schottky diode , diode , biasing , radiation damage , radiation hardening , depletion region , voltage , optics , semiconductor , physics , nuclear physics , quantum mechanics
Ni/4H-SiC Schottky barrier diodes SBDs were fabricated, and irradiated with the 60Co gamma-ray source to the accumulated dose of 1 MradSi. The 0 V and -30 V bias voltage were applied to the SBDs during irradiation. After 1MradSi radiation, the Schottky barrier height and ideality factor of the Ni/4H-SiC SBDs under different bias voltages basically remain at the same values, and the minority carrier lifetime of the epitaxial layer also has no degradation. The reverse current decreases after radiation, which can be explained by the negative surface charge increase. The results show radiation bias voltage has no obvious influence on the radiation effect of the Ni/4H-SiC SBD.