Open AccessEffect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor
Author(s) -
Jing Chen,
Jin Guojun,
Yuexin Ma
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.2707
Subject(s) - ferromagnetism , materials science , magnetic semiconductor , doping , vacancy defect , oxygen , sputter deposition , condensed matter physics , semiconductor , sputtering , partial pressure , analytical chemistry (journal) , thin film , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , chromatography
Zn095Co005O films were prepared under different oxygen partial pressure P by magnetron sputtering. The effect of P on the magnetic and electrical properties was investigated. The effect of oxygen vacancy on the magnetic properties was also calculated by first-principles calculation. The experimental results indicated that Zn095Co005O films showed room-temperature ferromagnetism and high electron concentration when they were deposited under high vacuum. The ferromagnetism disappeared and the electron concentration decreased sharply when P was increased. The calculated results indicated that the energy of ferromagnetic states could be decreased by introducing oxygen vacancy in Co-doped ZnO system. The stability of ferromagnetism was determined by the distance between oxygen vacancy and Co atoms.