Open AccessInfrared analysis on hydrogen content and Si—H bonding configuration of hydrogenated nanocrystalline silicon thin films
Author(s) -
Chengzhao Chen,
Ping Li,
Xuelian Lin,
Cui-Qing Liu,
Qiu Sheng-Hua,
Wu Yan-Dan,
Chao Yu
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.2565
Subject(s) - materials science , nanocrystalline silicon , crystallinity , nanocrystalline material , plasma enhanced chemical vapor deposition , silicon , crystallization , chemical vapor deposition , raman spectroscopy , substrate (aquarium) , hydrogen , amorphous solid , amorphous silicon , infrared , thin film , fourier transform infrared spectroscopy , chemical engineering , infrared spectroscopy , analytical chemistry (journal) , crystalline silicon , nanotechnology , crystallography , optics , optoelectronics , composite material , chemistry , oceanography , physics , organic chemistry , geology , engineering , chromatography
Hydrogenated silicon films were prepared by conventional radio frequency plasma-enhanced chemical vapor phase deposition technique at a high deposition rate at temperatures from 100 to 350℃, which were studied by Fourier transform infrared spectrum and Raman scattering spectrum. The results showed that the hydrogen content and the silicon-hydrogen bonding configurations of the films were closely related to their crystallization properties. When the films changed from amorphous to nanocrystalline phase, the hydrogen content decreased by over a half, and the Si—H bonding configuration was mainly SiH2. With the increase of substrate temperature and crystallinity, the hydrogen content and the structural factor of the nanocrystalline silicon films was reduced gradually.